high efficiency heterojunction power fet chip (.25 m x 2 00 m) the berex bcp0 2 0 t is a gaas power phemt with a nominal 0. 2 5 micron gate length and 2 00 micron gate width making the product ideally suited for amplifier applications where high - gain and medium power from dc to 26 ghz . the product may be used in either wideband or narrow - band applications. the bcp0 2 0t is produced using state of the art met allization with si 3 n 4 passivation and is screened to assure reliability. product features ? 2 4 dbm typical output power @12 ghz ? 1 4 db typical gain @ 12 ghz ? 60% pae typical @12 ghz ? 0. 2 5 x 2 00 m recessed gate ? also available in 70 mil. ceramic package (bcp020t - 70) applications ? commercial ? military / hi - rel . ? test & measurement dc characteristics t a = 25 c symbol parameter/test conditions min. typical max. unit i dss saturated drain current (v gs = 0v, v ds = 1.0v) 4 0 60 80 ma g m transconductance (v ds = 3v, v gs = 50% i dss ) 80 ms v p pinch - off voltage (i ds = 0. 3 ma, v ds = 3 v) - 2.5 - 1.1 - 0.5 v bv gd drain breakdown voltage (i g = 0. 6 ma, source open) - 1 5 - 1 2 v bv gs source breakdown voltage (i g = 0. 6 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 160 c/w electrical characteristic s ( tuned for power ) t a = 25 c symbol parameter/test conditions test freq . min. typical m ax . unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 22.5 24.0 24.0 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 1 2 . 0 14.0 12.0 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 60 55 % nf 50 ohm noise figure (v ds =2v, i ds =10 ma ) 12 ghz 1.09 db bcp020t .x.om brx, in. 50 so bd. 1 - 01 sana caa, ca 505 . (08) 52 - 555 jana 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp020t electrical characteristic s ( tuned for gain ) t a = 25 c symbol parameter/test conditions test freq . min . typical max . unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 20.0 21.0 21.0 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 15.5 17.0 13.0 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 45 45 % nf 50 ohm noise figure (v ds =2v, i ds =10 ma ) 12 ghz 1.09 db maximum rating s (t a = 25 c) symbols parameters absolute continuous v ds v gs i ds i gsf p in t ch t stg p t drain - source voltage gate - source voltage drain current forward gate current input power channel temperature storage temperature total power dissipation 12 v - 6 v i dss 1 1 ma 17 dbm 175 c - 60 c - 150 c 1 . 0 w 8 v - 3 v i dss 2 ma @ 3db compression 150 c - 60 c - 150 c 0.8 w exceeding any of the above maximum ratings will result in reduced mttf and may cause permanent damage to the device. p in _p out /gain, pae (12 ghz) frequency = 12ghz v ds = 8 v, i ds = 50% i dss (tuned for power) frequency = 12ghz v ds = 8 v, i ds = 50% i dss (tune d for gain) www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp020t p in _p out /gain, pae (18 ghz) frequency = 18ghz v ds = 8 v, i ds = 50% i dss (tuned for power) frequency = 18ghz v ds = 8 v, i ds = 50% i dss (tune d for gain ) s - parameter s ( v ds = 8v, i ds = 50% i dss ) freq . [g hz] s11 [ mag ] s11 [ang . ] s21 [ mag ] s21 [ang . ] s12 [ mag ] s12 [ang . ] s22 [ mag ] s22 [ang . ] 1 0.98 - 17.63 6.54 165.56 0.014 81.13 0.80 - 5.99 2 0.95 - 35.11 6.35 152.34 0.027 70.37 0.78 - 11.31 3 0.90 - 52.87 6.08 140.12 0.039 64.06 0.75 - 15.78 4 0.85 - 69.99 5.77 127.94 0.048 53.79 0.71 - 20.09 5 0.80 - 88.24 5.43 116.00 0.054 47.49 0.67 - 24.42 6 0.76 - 105.52 5.04 104.87 0.058 40.26 0.63 - 27.88 7 0.72 - 122.72 4.68 93.83 0.063 33.49 0.59 - 32.54 8 0.71 - 138.65 4.33 84.53 0.064 29.01 0.56 - 34.82 9 0.69 - 152.44 3.97 75.99 0.063 25.78 0.53 - 36.61 10 0.68 - 166.12 3.69 67.53 0.064 22.40 0.51 - 38.64 11 0.69 - 178.47 3.38 59.72 0.064 18.97 0.47 - 39.57 12 0.70 170.61 3.17 51.75 0.067 17.78 0.46 - 42.35 13 0.71 158.55 2.94 44.52 0.061 12.25 0.43 - 43.48 14 0.73 149.14 2.73 37.18 0.062 12.90 0.40 - 45.06 15 0.74 140.53 2.57 30.17 0.063 10.83 0.37 - 47.57 16 0.78 131.12 2.40 22.71 0.064 8.80 0.33 - 49.99 17 0.81 125.12 2.23 15.52 0.062 6.82 0.29 - 55.76 18 0.82 117.90 2.06 8.53 0.066 2.23 0.24 - 62.01 19 0.84 111.86 1.89 0.82 0.065 0.95 0.19 - 72.70 20 0.86 109.58 1.74 - 5.04 0.066 - 1.33 0.14 - 89.32 21 0.87 105.71 1.60 - 11.40 0.068 - 0.98 0.11 - 123.58 22 0.88 103.28 1.45 - 17.65 0.068 - 3.31 0.13 - 160.51 23 0.88 103.13 1.32 - 22.86 0.070 - 5.10 0.18 174.94 24 0.88 101.01 1.20 - 28.51 0.070 - 5.63 0.25 162.82 25 0.90 100.91 1.08 - 33.17 0.066 - 6.26 0.32 154.30 26 0.90 102.38 1.00 - 36.21 0.070 - 2.08 0.38 150.28 note: s - parameters include bond wires. reference planes are at edge of substrates shown on wire bonding information figure below. www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp020t wire bonding information follow the wire bonding diagrams recommended by berex below to achieve optimum device performance. berex recommends thermo - compression wedge bonding. as a general rule, bonding temperature should be kept to a maximum of 280c for no longer than 2 min utes for all bonding wires. ultrasonic bonding is not recommended. using 1 mil . diameter, au bonding wires. 1. gate to input transmission line - length and height : 600 m x 250 m - number of wire (s) : 1 2. drain t o output transmission line - length and height : 400 m x 250 m - number of wire(s) : 1 3. source to ground plate - length and height : 250 m x 300 m - number of wire(s) : 4 die attach recommend ations : berex recommends the e utectic die attach using au - sn (80% - 20%) pre - forms. the die attach station must have accurate temperature control, and the operation should be performed with parts no hotter than 300c for less than 10 seconds. an inert forming ga s (90% n 2 - 10% h 2 ) or clean, dry n 2 should be used. use of conductive epoxy (gold or silver filled) may also be acceptable for die - attaching low power devices. handling precautions : gaas fets are very sensitive to and may be damaged by electrostatic dis charge (esd). therefore, proper esd precautions must be taken whenever you are handling these devices. it is critically important that all work surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to prevent esd damage. storage & shipping : berexs standard chip device shipping package consists of an antistatic gel - pak, holding the chips, placed inside a sealed antistatic and moisture barrier bag. this packaging is designed to provide a reasonable measure of protection from both mechanical and esd damage. chip devices should be stored in a clean, dry nitrogen gas environment at room temperature until they are required for assembly. only ope n the shipping package or perform die assembly in a work area with a class 10,000 or better clean room environment to prevent contamination of the exposed devices. www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp020t caution : this product contain s gallium arsenide ( gaas ) which can be hazardous to the hum an body and the environment. theref ore, it must be hand led with care and in accordance with all governmental and company regulati ons for the safe han dling and disposal o f hazardous waste. do not burn, destroy, cut, crush or chemically dissolve the product . do not lick the p roduct or in any way allow it to enter th e mouth. exclude th e product from gener al industrial waste or garbage and dispose of only in a ccordance to applica ble laws and/or ordi nances. life support policy berex products are not authorized for use as critical components in life support devices without the express written approval of berex. 1. life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) supp ort or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life su pport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer berex reserves the right to make changes without further notice to an y products herein to improve reliability, function or design. berex does not assume any liability arising out of the application or use of any product or circuit described herein. rohs compliant for complete specifications, s - parameters and information on bonding and handling, visited our website; www.berex.com www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
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